Voltage generation circuit, flash memory and semiconductor device

摘要

A voltage generation circuit is provided to suppress the required layout of the voltage generation circuit and stabilize the output voltage thereof.;[Solution];A voltage generation circuit 100A according to the present invention includes a charge pump circuit 20, a resistor voltage-division circuit 120, a comparator 34 having a voltage Vm output from the resistor voltage-division circuit 120 and a reference voltage, and a control circuit 36 controlling the operation of the charge pump circuit 20 based on the comparison result of the comparator 34. The resistor voltage-division circuit 120 includes resistors R1˜R4 connected in series between an output node NOUT and a ground and generates the voltage Vm at a voltage-division node NR in response to an output voltage VOUT. The resistor voltage-division circuit 120 further includes a parasitic capacitor Cp to capacitively couple the resistors R1, R2, R3 and R4 to the output node NOUT.

主权项

1. A voltage generation circuit, comprising:
a conversion circuit converting an input voltage to another voltage level and providing an output voltage after converting, to an output node; a resistor voltage-division circuit coupled to the output node, generating a voltage corresponding to the output voltage; a comparison circuit comparing the voltage generated by the resistor voltage-division circuit and a reference voltage; and a control circuit controlling the conversion circuit based on a comparing result of the comparison circuit, wherein the resistor voltage-division circuit comprises a capacitor device which is capacitively coupling at least one part of a resistor in the resistor voltage-division circuit to the output node, and wherein the capacitor device comprises a conductor portion extending from the output node and over the at least one part of a resistor.