发明名称 |
Light-emitting device and electronic device |
摘要 |
A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC. |
申请公布号 |
US9627648(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514802642 |
申请日期 |
2015.07.17 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Eguchi Shingo |
分类号 |
H01L29/08;H01L51/52;H01L27/32;H01L51/00 |
主分类号 |
H01L29/08 |
代理机构 |
Husch Blackwell LLP |
代理人 |
Husch Blackwell LLP |
主权项 |
1. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to and below the first surface; a transistor over the first surface; a planarization layer over the transistor; a light-emitting element over the planarization layer, the light-emitting element being electrically connected to the transistor; an adhesive layer over the light-emitting element; and a second flexible substrate over the adhesive layer, the second flexible substrate comprising a third surface and a fourth surface opposite to and over the third surface, wherein the adhesive layer is in contact with the third surface, and wherein a first distance from the second surface to a top surface of the planarization layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the top surface of the planarization layer. |
地址 |
JP |