Metal nitride keyhole or spacer phase change memory cell structures

摘要

Non-volatile memory cell having small programming power and a reduced resistance drift are provided. In one embodiment of the present application, a non-volatile memory cell is provided that includes a layer of dielectric material that has a via opening that exposes a surface of a bottom electrode. A metal nitride spacer is located along a bottom portion of each sidewall surface of the layer of dielectric material and in the via opening. A phase change material structure is present in the via opening and contacting a top portion of each sidewall surface of the layer of dielectric material and a topmost surface of each metal nitride spacer. A top electrode is located on a topmost surface of the phase change material structure.

主权项

1. A non-volatile memory device comprising:
a bottom electrode embedded in an insulating substrate, said bottom electrode having a topmost surface that is coplanar with a topmost surface of said insulating substrate; a layer of dielectric material having a plurality of sidewall surfaces located within a via opening, said layer of dielectric material is located above said bottom electrode and said insulating substrate; a metal nitride spacer located along a bottom portion of each sidewall surface of said layer of dielectric material and in said via opening, said metal nitride spacer having a bottommost surface that present directly on a portion of said topmost surface of said bottom electrode, and a height that is less than a height of said dielectric layer; a phase change material structure present within said via opening and contacting at least a sidewall surface of said nitride spacer, said phase change material structure having a bottommost surface that is present directly on a remaining portion of said topmost surface of said bottom electrode; and a top electrode located on a topmost surface of said phase change material structure.