发明名称 |
Enhanced channel mobility three-dimensional memory structure and method of making thereof |
摘要 |
A stack including an alternating plurality of first material layers and second material layers is provided. A memory opening is formed and at least a contiguous semiconductor material portion including a semiconductor channel is formed therein. The contiguous semiconductor material portion includes an amorphous or polycrystalline semiconductor material. A metallic material portion is provided at a bottom surface of the semiconductor channel, at a top surface of the semiconductor channel, or on portions of an outer sidewall surface of the semiconductor channel. An anneal is performed to induce diffusion of a metal from the metallic material portion through the semiconductor channel, thereby inducing conversion of the amorphous or polycrystalline semiconductor material into a crystalline semiconductor material. The crystalline semiconductor material has a relatively large grain size due to the catalytic crystallization process, and can provide enhanced charge carrier mobility. |
申请公布号 |
US9627395(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514619691 |
申请日期 |
2015.02.11 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Zhang Yanli;Makala Raghuveer S.;Alsmeier Johann |
分类号 |
H01L27/115;H01L21/324;H01L21/768;H01L21/28;H01L23/522;H01L29/788;H01L27/11556 |
主分类号 |
H01L27/115 |
代理机构 |
The Marbury Law Group LLC |
代理人 |
The Marbury Law Group LLC |
主权项 |
1. A method of manufacturing a monolithic three-dimensional memory device, comprising:
forming a stack including an alternating plurality of first material layers and second material layers over a substrate; forming an opening that vertically extends through the stack; forming a semiconductor channel comprising an amorphous or polycrystalline semiconductor material over a sidewall of the opening, wherein the semiconductor channel extends through the stack; diffusing a metallic material through at least a portion of the semiconductor channel, wherein the metallic material induces crystallization of the amorphous or polycrystalline semiconductor material in the semiconductor channel into a crystalline semiconductor material portion; and forming backside recesses by removing the second material layers selective to the first material layers, wherein a portion of the outer sidewall of the semiconductor channel comprising the amorphous or polycrystalline semiconductor material is physically exposed in each backside recess. |
地址 |
Plano TX US |