发明名称 |
Field-effect transistor with dual vertical gates |
摘要 |
A semiconductor device includes an n-type vertical field-effect transistor (FET) that includes: a first source/drain feature disposed in a substrate; a first vertical bar structure that includes a first sidewall and a second sidewall disposed over the substrate; a gate disposed along the first sidewall of the first vertical bar structure; a second vertical bar structure electrically coupled to the first vertical bar structure; and a second source/drain feature disposed over the first vertical bar structure; and a p-type FET that includes; a third source/drain feature disposed in the substrate; a third vertical bar structure that includes a third sidewall and a fourth sidewall disposed over the substrate; the gate disposed along the third sidewall of the third vertical bar structure; a fourth vertical bar structure electrically coupled to the third vertical bar structure; and a fourth source/drain feature disposed over the third vertical bar structure. |
申请公布号 |
US9627531(B1) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514928449 |
申请日期 |
2015.10.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Chiang Hung-Li;Yeh Chih Chieh;Peng Cheng-Yi;Chen Tzu-Chiang;Yeo Yee-Chia |
分类号 |
H01L29/78;H01L29/66;H01L27/00;H01L27/092;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A semiconductor device comprising:
a first vertical bar structure disposed over a substrate, wherein the first vertical bar structure includes a first sidewall and an opposing second sidewall; a first gate feature disposed along the first sidewall of the first vertical bar structure such that the first gate feature is electrically coupled to the first vertical bar structure; a second vertical bar structure disposed over the substrate, wherein the second vertical bar structure is electrically coupled to the first vertical bar structure and serves as a second gate feature; a first source/drain feature disposed in the substrate below the first vertical bar structure; and a second source/drain feature disposed over the first vertical bar structure. |
地址 |
Hsin-Chu TW |