发明名称 Epitaxial growth of high quality vanadium dioxide films with template engineering
摘要 Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates.
申请公布号 US9627490(B1) 申请公布日期 2017.04.18
申请号 US201514974178 申请日期 2015.12.18
申请人 Wisconsin Alumni Research Foundation 发明人 Eom Chang-Beom;Lee Daesu
分类号 H01L29/24;H01L21/02;H01L21/36;H03K17/56;H01L29/78;H01L29/66;H01L29/10;H03K17/687;H01L45/00;H03K17/51 主分类号 H01L29/24
代理机构 Bell & Manning, LLC 代理人 Bell & Manning, LLC
主权项 1. A layered oxide structure comprising: a substrate comprising single-crystalline TiO2; an intervening layer comprising columnar, crystalline domains of rutile SnO2 on the substrate, wherein the columnar, crystalline domains of SnO2 have an epitaxial relationship with the single-crystalline TiO2; and an overlayer comprising crystalline domains of VO2 on the intervening layer, wherein the crystalline domains of VO2 have an epitaxial relationship with the columnar, crystalline domains of rutile SnO2; wherein the VO2 has a metal-insulator phase transition critical temperature, below which the VO2 has a monoclinic crystal structure and above which the VO2 has a rutile crystal structure.
地址 Madison WI US