发明名称 |
Epitaxial growth of high quality vanadium dioxide films with template engineering |
摘要 |
Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates. |
申请公布号 |
US9627490(B1) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514974178 |
申请日期 |
2015.12.18 |
申请人 |
Wisconsin Alumni Research Foundation |
发明人 |
Eom Chang-Beom;Lee Daesu |
分类号 |
H01L29/24;H01L21/02;H01L21/36;H03K17/56;H01L29/78;H01L29/66;H01L29/10;H03K17/687;H01L45/00;H03K17/51 |
主分类号 |
H01L29/24 |
代理机构 |
Bell & Manning, LLC |
代理人 |
Bell & Manning, LLC |
主权项 |
1. A layered oxide structure comprising:
a substrate comprising single-crystalline TiO2; an intervening layer comprising columnar, crystalline domains of rutile SnO2 on the substrate, wherein the columnar, crystalline domains of SnO2 have an epitaxial relationship with the single-crystalline TiO2; and an overlayer comprising crystalline domains of VO2 on the intervening layer, wherein the crystalline domains of VO2 have an epitaxial relationship with the columnar, crystalline domains of rutile SnO2; wherein the VO2 has a metal-insulator phase transition critical temperature, below which the VO2 has a monoclinic crystal structure and above which the VO2 has a rutile crystal structure. |
地址 |
Madison WI US |