FinFET devices and methods of forming the same

摘要

FinFET devices and methods of forming the same are disclosed. One FinFET device includes a substrate with first and second fins in a first region and third and fourth fins in a second region, and first to fourth gates respectively across the first to fourth fins. The first end sidewall of the first gate is faced to the second end sidewall of the second gate, and a first opening is formed between the first and second end sidewalls. The third end sidewall of the third gate is faced to the fourth end sidewall of the fourth gate, and a second opening is formed between the third and fourth end sidewalls. The first and second regions have different pattern densities, and the included angle between the sidewall of the first opening and the substrate is different from the included angle between the sidewall of the second opening and the substrate.

主权项

1. A FinFET device, comprising:
a substrate having at least one first fin and at least one second fin in a first region and having at least one third fin and at least one fourth fin in a second region; a first gate across the at least one first fin and a second gate across the at least one second fin, wherein a first end sidewall of the first gate is faced to a second end sidewall of the second gate, and a first opening is formed between the first and second end sidewalls of the first and second gates; and a third gate across the at least one third fin and a fourth gate across the at least one fourth fin, wherein a third end sidewall of the third gate is faced to a fourth end sidewall of the fourth gate, and a second opening is formed between the third and fourth end sidewalls of the third and fourth gates, wherein a pattern density of the first region is different from a pattern density of the second region, and an included angle between a sidewall of the first opening and the substrate is different from an included angle between a sidewall of the second opening and the substrate.