| 发明名称 | Wafer processing method | ||
| 摘要 | In a wafer processing method, a protective film is formed by applying a liquid resin to the front side of a wafer. A protective tape is adhered to a surface of the protective film. A modified layer is formed by applying a laser beam having such a wavelength as to be transmitted through the wafer along each of division lines, with a focal point positioned inside the wafer. The modified layer is formed inside the wafer along each of the division lines. The back side of the wafer is ground while supplying grinding water to thin the wafer to a predetermined thickness and to crack the wafer along the division lines using the modified layers as crack starting points so as to divide the wafer into individual device chips, after the protective film is formed, the protective tape is adhered, and the modified layer is formed. | ||
| 申请公布号 | US9627242(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514727214 | 申请日期 | 2015.06.01 |
| 申请人 | Disco Corporation | 发明人 | Nakamura Masaru |
| 分类号 | H01L21/00;H01L21/683;H01L21/02;H01L21/82;H01L21/67;H01L21/78;H01L21/304 | 主分类号 | H01L21/00 |
| 代理机构 | Greer Burns & Crain Ltd. | 代理人 | Greer Burns & Crain Ltd. |
| 主权项 | 1. A wafer processing method for dividing a wafer having a plurality of division lines in a grid pattern on a front side thereof and having a device in each of a plurality of regions partitioned by the division lines, along the division lines into individual device chips, the wafer processing method comprising: a protective film forming step of applying a liquid resin to the front side of the wafer to form a protective film followed by; a protective tape adhering step of adhering a protective tape to a surface of the protective film; a modified layer forming step of applying a laser beam having such a wavelength as to be transmitted through the wafer to the wafer along each of the division lines, with a focal point positioned inside the wafer, to form a modified layer inside the wafer along each of the division lines; and a back side grinding step of grinding a back side of the wafer while supplying grinding water to thin the wafer to a predetermined thickness and to crack the wafer along the division lines using the modified layers as crack starting points so as to divide the wafer into individual device chips, after the protective film forming step, the protective tape adhering step, and the modified layer forming step are carried out. | ||
| 地址 | Tokyo JP | ||