| 发明名称 | Electronic device having resistance element | ||
| 摘要 | An electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance variable element interposed between the first electrode and the second electrode, and a conductor arranged at least one of a first side and a second side of the resistance variable element to apply an electric field to the resistance variable element while being spaced apart from the resistance variable element, the first side facing the second side. | ||
| 申请公布号 | US9627061(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201615016122 | 申请日期 | 2016.02.04 |
| 申请人 | SK hynix Inc. | 发明人 | Yoon Sung-Joon |
| 分类号 | G11C13/00;G06F12/0802;G06F13/40;G11C11/16;G11C11/22;H01L43/08;H01L45/00 | 主分类号 | G11C13/00 |
| 代理机构 | Perkins Coie LLP | 代理人 | Perkins Coie LLP |
| 主权项 | 1. An electronic device including a semiconductor memory, wherein the semiconductor memory comprises: a first electrode; a second electrode spaced apart from the first electrode; a resistance variable element interposed between the first electrode and the second electrode, and allowing a current flow in a first direction from the first electrode to the second electrode or from the second electrode to the first electrode in response to a voltage or current applied to the first and second electrodes; a conductor arranged at a first side of the resistance variable element to be spaced apart from the resistance variable element and providing an electric field to the resistance variable element; and a piezoelectric material interposed between the conductor and the resistance variable element, and having an insulating characteristic. | ||
| 地址 | Icheon-Si KR | ||