Production method for transparent conductive film

摘要

A method for producing a transparent conductive film includes:
forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), whereinthe transparent conductive coating has a thickness in the range of 10 to 40 nm, andthe transparent conductive coating has a specific resistance of 1.3×10−4 to 2.8×10−4 Ω·cm.

主权项

1. A method for producing a transparent conductive film comprising an organic polymer film substrate and a transparent conductive coating provided on at least one surface of the organic polymer film substrate, the method comprising:
the step (A) of forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10−4 to 2.8×10−4 Ω·cm, and an RF power source of the RF superimposed DC sputtering deposition has a frequency of 10 to 60 MHz, and the method further comprises a pre-sputtering step (a) that is performed before the high magnetic field RF superimposed DC sputtering deposition, the pre-sputtering step (a) comprising forming a pre-sputtering coating in the presence of inert gas without introduction of oxygen by carrying out pre-sputtering RF superimposed DC sputtering deposition until a resistance resulting therefrom reaches a stable level with a ratio of RF power to DC power of 0.4 to 1.2 at an RF power source frequency of 10 MHz to 20 MHz, or with a ratio of RF power to DC power of 0.2 to 0.6 at an RF power source frequency of more than 20 MHz but not more than 60 MHz.