Al alloy film for display or semiconductor device, display or semiconductor device having Al alloy film, and sputtering target

摘要

Provided is an Al alloy film for display devices, which has excellent heat resistance under high temperatures, low electric resistance (wiring resistance), and excellent corrosion resistance under alkaline environments. The present invention relates to an Al alloy film containing Ge (0.01-2.0 at. %) and a group X element (Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and/or Os), wherein, with regard to precipitates each containing Al, the group X element and Ge generated when a heat treatment at 450 to 600° C. is carried out, the density of some of the precipitates which have equivalent circle diameters of 50 nm or more is controlled.

主权项

1. An Al alloy film, comprising:
0.01 to 2.0 at % Ge; at least one element X selected from the group consisting of Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and Os; and at least one rare earth element; wherein: first precipitates comprising Al, Ge, and the at least one element X are present in the Al alloy film; each of the first precipitates has an equivalent circle diameter of 50 nm or more; and the first precipitates are present at a density of 200,000 particles/mm2 or more in the Al alloy film; third precipitates comprising Al, the at least one element X, and the at least one rare earth element are present in the Al alloy film; each of the third precipitates has an equivalent circle diameter of 10 nm or more; and the third precipitates are present at a density of 1,000,000 particles/mm2 or more in the Al alloy film.