发明名称 |
Organic light emitting display device |
摘要 |
Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution. |
申请公布号 |
US9627462(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201615005758 |
申请日期 |
2016.01.25 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Kwon Hoi Yong;Lee Joon Suk;Kim Eui Tae;Park Sung Hee;Shin Ki Seob |
分类号 |
H01L27/32;H01L27/12;H01L29/786 |
主分类号 |
H01L27/32 |
代理机构 |
Fenwick & West LLP |
代理人 |
Fenwick & West LLP |
主权项 |
1. An organic light-emitting display (OLED) device, comprising:
a switching thin-film transistor; a driving thin-film transistor connected to the switching thin thin-film transistor; a first storage capacitor having one electrode being an active layer of the driving thin-film transistor; and a second storage capacitor having one electrode being one of a source electrode and a drain electrode of the driving thin-film transistor, wherein the first storage capacitor and the second storage capacitor overlap each other, and wherein the switching thin-film transistor is an oxide semiconductor thin-film transistor and the driving thin-film transistor is a low temperature poly-silicon (LTPS) thin-film transistor, wherein both the other electrode of the first storage capacitor and the other electrode of the second storage capacitor are an active layer of the switching thin-film transistor. |
地址 |
Seoul KR |