Semiconductor memory device and method for manufacturing the same

摘要

A semiconductor memory device according to an embodiment, includes a stacked body, a semiconductor member, a charge storage layer, a charge block layer and an electrode antioxidant layer. The stacked body includes a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers. The semiconductor member extends in a stacking direction of the stacked body and penetrates the stacked body. The tunnel insulating layer is provided on a side surface of the semiconductor member. The charge storage layer is provided on a side surface of the tunnel insulating layer. The charge block layer is provided on a side surface of the charge storage layer and contains oxygen. The electrode antioxidant layer is provided between the charge block layer and the electrode layer and has a composition different from that of the electrode layer.

主权项

1. A semiconductor memory device comprising:
a stacked body including a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers; a semiconductor member extending in a stacking direction of the stacked body and penetrating the stacked body; a tunnel insulating layer provided on a side surface of the semiconductor member; a charge storage layer provided on a side surface of the tunnel insulating layer; a charge block layer provided on a side surface of the charge storage layer and containing oxygen; and an electrode antioxidant layer provided between the charge block layer and the electrode layer and having a composition different from that of the electrode layer, wherein as viewed from a direction vertical to the stacking direction, the charge storage layer and the charge block layer that are stacked in a direction of the semiconductor member on a side surface side of the electrode antioxidant layer project in a direction of the tunnel insulating layer beyond the charge storage layer and the charge block layer that are stacked in the direction of the semiconductor member on a side surface side of the inter-electrode insulating layer.