Methods for probing semiconductor fins through four-point probe and determining carrier concentrations

摘要

A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.

主权项

1. A method comprising:
forming a semiconductor region between two opposite portions of an isolation region; performing a planarization to level a top surface of the semiconductor region with top surfaces of the opposite portions of the isolation region; recessing top surfaces of the isolation region, wherein a top portion of the semiconductor region protrudes higher than a top surface of a remaining portion of the isolation region to form a semiconductor fin; probing the semiconductor region using a four-point probe head, wherein four pins of the four-point probe head are in contact with different portions of a top surface of the semiconductor fin; and determining a carrier concentration of the semiconductor region based on results of the probing.