| 发明名称 | Patterning scheme to minimize dry/wets strip induced device degradation | ||
| 摘要 | A patterning scheme to minimize dry/wet strip induced device degradation and resultant devices are provided. The method includes removing a workfunction material over a first device area of a structure, while protecting the workfunction material over a second device area of the structure with a first masking material. The method further includes applying a second masking material over the first device area and the first masking material. The method further includes removing the first masking material and the second masking material until the workfunction material is exposed over the second device area. | ||
| 申请公布号 | US9627272(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514833813 | 申请日期 | 2015.08.24 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Dong Huihang;Li Wai-Kin |
| 分类号 | H01L21/3205;H01L21/8238;H01L21/3213;H01L21/28;H01L21/02 | 主分类号 | H01L21/3205 |
| 代理机构 | Roberts Mlotkowski Safran Cole & Calderon, P.C. | 代理人 | Cai Yuanmin;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
| 主权项 | 1. A method comprising: removing a workfunction material over a first device area of a structure to expose an underlying dielectric material, while protecting the workfunction material over a second device area of the structure with a first masking material; applying a second masking material over the first device area directly on the underlying dielectric material and the first masking material over the second device area; and removing the first masking material and the second masking material until the workfunction material is exposed over the second device area, wherein the first masking material and the second masking material have a substantially same etching rate. | ||
| 地址 | George Town KY | ||