| 发明名称 | Method for producing a semiconductor | ||
| 摘要 | A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body. | ||
| 申请公布号 | US9627209(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201615049192 | 申请日期 | 2016.02.22 |
| 申请人 | INFINEON TECHNOLOGIES AG | 发明人 | Schulze Hans-Joachim;Muri Ingo;Kroener Friedrich;Schustereder Werner |
| 分类号 | H01L21/322;H01L29/868;H01L21/265;H01L21/263;H01L21/324;H01L21/3063 | 主分类号 | H01L21/322 |
| 代理机构 | Viering,Jentschura&Partner mbB | 代理人 | Viering,Jentschura&Partner mbB |
| 主权项 | 1. A method for producing a semiconductor, comprising: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body comprising performing a first implantation of protons into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body comprising forming a second implantation of helium into the semiconductor body via the second side to a second depth location of the semiconductor body, wherein a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body. | ||
| 地址 | Neubiberg DE | ||