发明名称 |
Structure and method for interconnection |
摘要 |
A method includes providing a substrate having a first conductive feature in a first dielectric material layer; forming a first etch stop layer on the first dielectric material layer, wherein the first etch stop layer is formed of a high-k dielectric material; forming a second etch stop layer on the first etch stop layer; forming a second dielectric material layer on the second etch stop layer; forming a pattered mask layer on the second dielectric material layer; forming a first trench in the second dielectric material layer and the second etch stop layer; removing a portion of the first etch stop layer through the first trench to thereby form a second trench, wherein removing the portion of the first etch stop layer includes applying a solution to the portion of the first etch stop layer; and forming a second conductive feature in the second trench. |
申请公布号 |
US9627215(B1) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514865165 |
申请日期 |
2015.09.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Huang Chien-Hua;Tsai Cheng-Hsiung;Lee Chung-Ju;Tsai Cherng-Shiaw |
分类号 |
H01L21/306;H01L23/522;H01L21/768;H01L21/3105;H01L21/321;H01L21/311;H01L21/02;H01L23/528;H01L23/532 |
主分类号 |
H01L21/306 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method comprising:
providing a substrate having a first conductive feature in a first dielectric material layer; forming a first etch stop layer on the first dielectric material layer, wherein the first etch stop layer is formed of a high-k dielectric material; forming a second etch stop layer on the first etch stop layer; forming a second dielectric material layer on the second etch stop layer; forming a patterned mask layer on the second dielectric material layer; forming a first trench in the second dielectric material layer and the second etch stop layer; removing a portion of the first etch stop layer through the first trench to thereby form a second trench, wherein removing the portion of the first etch stop layer includes applying a solution to the portion of the first etch stop layer to remove the portion of the first etch stop layer and form a protective layer on the first conductive feature; and forming a second conductive feature in the second trench, wherein the second conductive feature is electrically connected to the first conductive feature. |
地址 |
Hsin-Chu TW |