Semiconductor memory device and semiconductor system

摘要

A semiconductor memory device may include: a memory cell array comprising a plurality of memory cells coupled to a plurality of bit line pairs and a plurality of word lines; and an operation circuit suitable for setting a parameter corresponding to an input command, and performing an operation corresponding to the input command on the memory cell array based on the set parameter, wherein, when the input command is of the same type as a previous input command, the operation circuit skips setting the parameter for each of preset word line groups.

主权项

1. A semiconductor memory device comprising:
a memory cell array comprising a plurality of memory cells coupled to a plurality of bit line pairs and a plurality of word lines; and an operation circuit suitable for setting a parameter corresponding to an input command, and performing an operation corresponding to the input command on the memory cell array based on the set parameter, wherein, when the input command is of the same type as a previous input command, the operation circuit skips setting the parameter for each of preset word line groups, wherein the preset word line groups are preset according to one or more of a program verification voltage level, a program start bias voltage, a pass voltage, a pipe gate voltage, a dummy word line voltage, a source line voltage, a blind number, and a maximum loop number.