Exposure apparatus, exposure method and manufacturing method of semiconductor device

摘要

According to one embodiment, a controller calculates wafer alignment residuals from results of wafer alignment measurement and calculates shape change displacement residuals from the surface shape of a wafer. Further, the controller calculates first conversion coefficients that are ratios of the wafer alignment residuals to the shape change displacement residuals and generates fine wafer alignment residual data by using the first conversion coefficients. Furthermore, the controller generates correction information in which first correction values at the time of the exposure processing are calculated for every shot on the wafer by using the fine wafer alignment residual data. Then, the controller controls exposure processing in an exposure unit by using the correction information corresponding to the shot of the wafer.

主权项

1. An exposure apparatus comprising:
a surface shape measuring unit that measures the surface shape of an object to be measured; an exposure unit that performs exposure on a resist applied to a wafer; and a controller that controls the surface shape measuring unit and the exposure unit, wherein the controller
measures the surface shape of the wafer to be subjected to exposure processing by the surface shape measuring unit before the exposure processing,performs wafer alignment measurement on the wafer in the exposure unit,calculates wafer alignment residuals from results of the wafer alignment measurement,calculates shape change displacement residuals from the surface shape of the wafer that is not yet subjected to the exposure processing,calculates first conversion coefficients that are ratios of the wafer alignment residuals to the shape change displacement residuals,converts the shape change displacement residuals of the wafer into fine wafer alignment residuals by use of the first conversion coefficients to generate fine wafer alignment residual data that are the collection of the fine wafer alignment residuals at measurement positions for the surface shape,generates correction information in which first correction values at the time of the exposure processing are calculated for every shot on the wafer by use of the fine wafer alignment residual data, andcontrols exposure processing in the exposure unit by use of the correction information corresponding to the shot of the wafer.