LEDs with efficient electrode structures

摘要

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

主权项

1. A semiconductor structure, comprising:
a first doped region disposed on a second doped region to form an active region therebetween for generating light; a cutout defined by a partial removal of material from the first doped region to expose a surface of the second doped region; a dielectric disposed only on the surface in a first region of the cutout; and an electrode comprising a first portion disposed on the dielectric and a second portion disposed on the surface in a second region of the cutout.