| 发明名称 | Semiconductor devices and methods of fabricating the same | ||
| 摘要 | A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device comprises: a semiconductor substrate with an active area defined by a plurality of isolation features; a gate stack extending across the active area onto portions of the isolation features, wherein the gate stack comprising a gate dielectric layer on the active area and the portions of the isolation features, and a gate electrode on the gate dielectric layer; and a protective seal comprising a vertical portion lining sidewalls of the gate stack and a horizontal portion extending onto a top surface of the isolation features, wherein the horizontal portion surrounding portions of the gate stack outside the active area in a top view. | ||
| 申请公布号 | US9627474(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514859153 | 申请日期 | 2015.09.18 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Wang Po-Shu;Chen Chien-Mao |
| 分类号 | H01L27/088;H01L29/06;H01L29/51;H01L29/49;H01L29/66;H01L29/423;H01L21/306;H01L21/308;H01L29/78 | 主分类号 | H01L27/088 |
| 代理机构 | Maschoff Brennan | 代理人 | Maschoff Brennan |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor substrate with an active area defined by a plurality of isolation features; a gate stack extending across the active area onto portions of the isolation features, wherein the gate stack comprising a gate dielectric layer on the active area and the portions of the isolation features, and a gate electrode on the gate dielectric layer, wherein an edge portion of the gate dielectric layer is higher than a center portion of the gate dielectric layer; and a protective seal comprising a vertical portion lining sidewalls of the gate stack and a horizontal portion extending onto a top surface of the isolation features, wherein the horizontal portion surrounding portions of the gate stack outside the active area in a top view. | ||
| 地址 | Hsinchu TW | ||