Non-volatile memory device

摘要

According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

主权项

1. A non-volatile memory device, comprising:
a plurality of memory cells stacked in a first direction and electrically connected in series, at least one of the memory cells including:
a control gate electrode;a first channel extending in the first direction through the control gate electrode;a conductive layer provided between the control gate electrode and the first channel;a first insulating film provided between the conductive layer and the first channel; anda second insulating film provided between the control gate electrode and the conductive layer,a width of the conductive layer in the first direction being narrower than a width of the second insulating film in the first direction,the conductive layer having a first side surface on the first channel side and a second side surface on the control gate electrode side, anda length of the first side surface in the first direction being longer than a length of the second side surface in the first direction; and a selection transistor provided above the memory cells, the selection transistor including:
a selection gate electrode; anda second channel extending in the first direction and connected on one end of the first channel.