| 发明名称 | Device manufacturing method and device | ||
| 摘要 | A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench. | ||
| 申请公布号 | US9627259(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514928482 | 申请日期 | 2015.10.30 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Takano Masamune |
| 分类号 | H01L21/78;H01L21/3065;H01L21/304;H01L21/02;H01L21/683;H01L23/00 | 主分类号 | H01L21/78 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A device manufacturing method comprising: forming a film on a substrate having a first surface and a second surface, the film being formed on the second surface side of the substrate, the substrate having a device region on the first surface side; forming a trench in part of the substrate from the first surface side of the substrate, while leaving the film to remain; and removing the film at a portion on the second surface side of the trench by injecting a substance onto the film from the second surface side of the substrate, a part of the film being remained on the substrate after the removing. | ||
| 地址 | Tokyo JP | ||