Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems

摘要

The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.

主权项

1. A system for non-contact analysis of a surface of at least one wafer, the system comprising:
a deflectometer arranged to emit a beam toward the at least one wafer such that the beam is reflected from the surface of the at least one wafer to a deflection sensor, wherein variation in a tilt of the surface of the at least one wafer causes deflection of the beam detectable by the deflection sensor; a scanning positioner coupled to the deflectometer and operable to re-position the deflectometer over the surface of the at least one wafer such that the beam emitted by the deflectometer is scanned over the surface of the at least one wafer; a tilt mapping engine operatively coupled with an output of the deflectometer and configured to generate a mapping of tilt measured at a plurality of measurement points throughout the surface of the at least one wafer by the deflectometer; and a surface height mapping engine operatively coupled with the tilt mapping engine and configured to generate a three-dimensional topographic mapping of the surface of the at least one wafer based on the mapping of the tilt.