Continuous process incorporating atomic layer etching

摘要

A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.

主权项

1. A method of continuous fabrication of a layered structure on a substrate having a patterned recess, comprising:
(i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; (ii) continuously from completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by plasma-enhanced atomic layer etching (PEALE) using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.