发明名称 Semiconductor module
摘要 A semiconductor module is provided with a high potential wiring, an output wiring, a low potential wiring, an upper arm switching device, an upper arm diode, a lower arm switching device, and a lower arm diode. A ratio of steady loss to switching loss of the upper arm switching device is configured to be smaller than a ratio of steady loss to switching loss of the lower arm switching device. Further, a ratio of steady loss to switching loss of the upper arm diode is configured to be smaller than a ratio of steady loss to switching loss of the lower arm diode.
申请公布号 US9627955(B2) 申请公布日期 2017.04.18
申请号 US201515110653 申请日期 2015.01.07
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 Kameyama Satoru
分类号 H01L29/78;H02M1/088;H02M3/155;H01L29/32;H01L29/861;H01L27/07;H01L29/739;H01L29/08;H01L23/31;H01L23/498;H01L25/065;H01L29/06;H01L29/10;H02M3/158;H01L29/40;H02M1/00 主分类号 H01L29/78
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A semiconductor module comprising: a first wiring; a second wiring; a third wiring; an upper arm switching device connected between the first wiring and the second wiring; a lower arm switching device connected between the second wiring and the third wiring; an upper arm diode connected between the first wiring and the second wiring such that the first wiring is connected to a cathode side; and a lower arm diode connected between the second wiring and the third wiring such that the second wiring is connected to a cathode side, wherein at least one of the following (a) and (b) is satisfied: (a) a ratio of steady loss to switching loss of the upper arm diode is smaller than a ratio of steady loss to switching loss of the lower arm diode; (b) a ratio of steady loss to switching loss of the upper arm switching device is smaller than a ratio of steady loss to switching loss of the lower arm switching device.
地址 Toyota JP