Electronic device and method for fabricating the same

摘要

An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.

主权项

1. A method for fabricating an electronic device, comprising:
forming a target processing layer; forming a barrier layer over the target processing layer to include an amorphous silicon layer which is doped with one or more impurities as a mask layer to protect, in subsequent processing, each area of the target processing layer covered by the barrier layer; patterning the barrier layer to form a patterned barrier layer for patterning the target processing layer; and etching the target processing layer using the patterned barrier layer, wherein the target processing layer includes a variable resistance layer that switches between two different resistance states.