发明名称 Light emitting device and method for manufacturing the same
摘要 A light emitting device in an embodiment includes first and second light transmissive insulators and a light emitting diode arranged between them. First and second electrodes of the light emitting diode are electrically connected to a conductive circuit layer provided on a surface of at least one of the first and second light transmissive insulators. Between the first light transmissive insulator and the second light transmissive insulator, a third light transmissive insulator is embedded which has at least one of a Vicat softening temperature of 80° C. or higher and 160° C. or lower and a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.
申请公布号 US9627594(B2) 申请公布日期 2017.04.18
申请号 US201615014307 申请日期 2016.02.03
申请人 Toshiba Hokuto Electronics Corporation 发明人 Maki Keiichi
分类号 H01L33/00;H01L33/56;H01L23/00;H01L25/075;H01L27/15;H01L33/54;H01L33/62 主分类号 H01L33/00
代理机构 Burr & Brown, PLLC 代理人 Burr & Brown, PLLC
主权项 1. A light emitting device comprising: a first light transmissive support including a first light transmissive insulator and a first conductive circuit layer provided on a first surface of the first light transmissive insulator; a second light transmissive support including a second light transmissive insulator and a second conductive circuit layer provided on a second surface of the second light transmissive insulator opposed to the first surface; a plurality of light emitting diodes, arranged between the first light transmissive insulator and the second light transmissive insulator so that a minimum distance d is 500 μm or more, each including a first electrode electrically connecting to the first conductive circuit layer, and a second electrode electrically connecting to the second conductive circuit layer; and a third light transmissive insulator embedded between the first light transmissive insulator and the second light transmissive insulator, wherein the third light transmissive insulator has a minimum thickness T2 between the plural light emitting diodes, which is smaller than a height T1 of the light emitting diode by a range of 5 μm or more and ½ or less of the height T1, and wherein a difference ΔT (T1−T2) between the height T1 of the light emitting diode and the minimum thickness T2 of the third light transmissive insulator falls within a range surrounded by a straight line 1 expressed by ΔT=5, a straight line 2 expressed by d=500, a straight line 3 expressed by ΔT=0.09d, a straight line 4 expressed by ΔT=0.0267d+60, and a straight line 5 expressed by ΔT=½ T1, in a graph with the difference ΔT [unit:μm] plotted on a vertical axis and the minimum distance d [unit:μm] between the plural light emitting diodes plotted on a horizontal axis.
地址 Asahikawa-Shi JP
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