发明名称 Radiation-emitting semiconductor chip comprising a structured mirror layer which is electrically non-conductive during operation
摘要 A radiation-emitting semiconductor chip (1) is specified, comprising—a semiconductor layer sequence (2) having a first main surface (3) and a second main surface (4) situated opposite the first main surface (3) wherein the semiconductor layer sequence (2) has an active zone (5) suitable for generating electromagnetic radiation, —a structured mirror layer (6), which is electrically non-conductive during operation and is arranged on the side of the first main surface (3) of the semiconductor layer sequence (2), wherein the mirror layer (6) has at least one mirror region (6A, 6B, 6C) which regionally covers the first main surface (3), —at least one encapsulation region (7A, 7B, 7C) which surrounds the at least one mirror region (6A, 6B, 6C) on all sides and is in direct contact with the mirror region (6A, 6B, 6C), wherein the at least one encapsulation region (7A, 7B, 7C); is electrically non-conductive during operation.
申请公布号 US9627587(B2) 申请公布日期 2017.04.18
申请号 US201414779940 申请日期 2014.03.20
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 Maute Markus
分类号 H01L33/46;H01L33/40;H01L33/44;H01L33/54;H01L33/62;H01L33/14;H01L33/38 主分类号 H01L33/46
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A radiation-emitting semiconductor chip, comprising: a semiconductor layer sequence having a first main surface and a second main surface situated opposite the first main surface, wherein the semiconductor layer sequence has an active zone suitable for generating electromagnetic radiation; a structured mirror layer, which is electrically non-conductive during operation and is arranged on the side of the first main surface of the semiconductor layer sequence, wherein the mirror layer has at least one mirror region which covers the first main surface in regions; at least one encapsulation region which surrounds the at least one mirror region on all sides and is in direct contact with the mirror region, wherein the at least one encapsulation region is electrically non-conductive during operation; a structured mirror layer, which is electrically conductive during operation and which is arranged on the side of the first main surface of the semiconductor layer sequence and comprises at least one mirror region which covers the first main surface in regions; and an encapsulation layer which is electrically conductive during operation and which is in direct contact with the mirror region on a side of the mirror region facing away from the first main surface.
地址 Regensburg DE