Field effect transistors with strained channel features

摘要

A method is provided for forming an integrated circuit. A doped silicon layer is formed on a silicon substrate. A silicon-germanium layer is subsequently formed on the doped silicon layer. The silicon-germanium layer is pattered to form a silicon-germanium feature. A silicon shell is formed on the silicon-germanium feature. At least a portion of the dopes silicon layer is converted to a porous silicon layer. Following the last step, the silicon shell is tensily stressed, making it a good candidate for use as a channel feature in an n-type field effect transistor.

主权项

1. A method for forming an integrated circuit comprising the steps of:
forming a doped silicon layer on a silicon substrate; forming a silicon-germanium layer on the doped silicon layer; patterning the silicon-germanium layer to form a silicon-germanium feature; forming a silicon shell on the silicon-germanium feature; and converting at least a portion of the doped silicon layer to a porous silicon layer after forming the silicon shell.