Method of manufacturing semiconductor device

摘要

A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor layer on a substrate; forming a first resist on the semiconductor layer; forming a second resist on the first resist; forming a first opening pattern of the first resist and a second opening pattern of the second resist, the first opening pattern and the second opening pattern being overlapped with each other; performing isotropic etching on the semiconductor layer through the first opening pattern and the second opening pattern so as to form a recess on a surface of the semiconductor layer, the recess having a slanted slope; and forming an electrode on the recess of the semiconductor layer which is exposed from the first opening pattern and the second opening pattern.