发明名称 |
Graded dielectric structures |
摘要 |
Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material. |
申请公布号 |
US9627501(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514607733 |
申请日期 |
2015.01.28 |
申请人 |
Micron Technology, Inc. |
发明人 |
Gealy F. Daniel;Bhat Vishwanath;Srividya Cancheepuram V.;Rocklein M. Noel |
分类号 |
H01L29/51;H01L49/02;H01L29/78;C23C16/455;H01L21/28;H01L21/314;H01L21/316 |
主分类号 |
H01L29/51 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A device comprising:
a metal oxide doped with a dopant, the metal oxide having a top surface and a bottom surface, wherein the metal oxide has varying amounts of the dopant across the metal oxide between the top and bottom surfaces with concentrations of the dopant at the top surface and at the bottom surface each being greater than a concentration of the dopant in a center of the metal oxide between the top surface and the bottom surface, the dopant including a metal dopant and/or silicon. |
地址 |
Boise ID US |