Indented gate end of non-planar transistor

摘要

In some embodiments, a semiconductor structure includes a substrate, a dielectric region, a non-planar structure and a gate stack. The dielectric region is formed on the substrate, and has a top surface. The non-planar structure protrudes from the top surface, and includes a channel region, and source and drain regions formed on opposite sides of the channel region. The gate stack is formed on the top surface, wraps around the channel region, and includes a gate top surface, and a gate side wall that does not intersect the non-planar structure. The gate side wall has a first distance from a vertical plane at a level of the top surface, and a second distance from the vertical plane at a level of the gate top surface. The vertical plane is vertical with respect to the top surface, and intersects the non-planar structure. The first distance is shorter than the second distance.

主权项

1. A semiconductor structure, comprising:
a first surface located at a first level; a first non-planar structure protruding from the first surface,
wherein the first non-planar structure comprises:
a first channel region; anda first source region and a first drain region formed on opposite sides of the first channel region; and a first gate stack formed on the first surface, and wrapping around the first channel region,
wherein the first gate stack comprises:
a first gate top surface formed at a second level under which the first gate stack is stacked; anda first gate side wall that forms a corner with the first gate top surface, wherein the first gate side wall does not wrap around the first non-planar structure, the first gate side wall has a first distance from a first vertical plane at the first level, the first gate side wall has a second distance from the first vertical plane at the second level, the first vertical plane is vertical with respect to the first surface, the first vertical plane intersects the first channel region, the first source region and the first drain region, and the first distance is shorter than the second distance.