Semiconductor device using EMC wafer support system and fabricating method thereof

摘要

Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
sequentially forming a seed layer and a copper layer on a top surface of a first semiconductor die that comprises a bond pad and a through silicon via (TSV); forming a first encapsulation unit on the copper layer; exposing the TSV by at least performing chemical mechanical polishing (CMP) on a bottom surface of the first semiconductor die; forming an interposer comprising a redistribution layer connected to the TSV; connecting a second semiconductor die to the redistribution layer of the interposer; forming a second encapsulation unit encapsulating the second semiconductor die; after forming the second encapsulation unit, exposing the copper layer by at least grinding the first encapsulation unit; sequentially etching the copper layer and the seed layer; and bonding a solder ball to the bond pad.