| 发明名称 | Semiconductor device having reduced contact resistance | ||
| 摘要 | A semiconductor device including at least one self-aligned contact has at least one gate electrode on a bulk substrate layer of the semiconductor device. A gate cap encapsulates the at least one gate electrode. The semiconductor device further includes at least one contact separated from the at least one gate electrode via a portion of the gate cap. The at least one contact includes a metal portion that directly contacts the gate cap. | ||
| 申请公布号 | US9627322(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514828639 | 申请日期 | 2015.08.18 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Ok Injo;Pranatharthiharan Balasubramanian S.;Surisetty Charan V. |
| 分类号 | H01L23/535;H01L21/768;H01L21/3105;H01L23/485;H01L23/532;H01L27/02;H01L27/088 | 主分类号 | H01L23/535 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Meyers Steven |
| 主权项 | 1. A semiconductor device including at least one self-aligned contact, comprising: at least one gate electrode on a bulk substrate layer of the semiconductor device; a gate cap that encapsulates the at least one gate electrode; at least one contact separated from the at least one gate electrode via a portion of the gate cap; and a barrier layer interposed between the at least one contact and a portion of the gate cap such that a metal portion of the contact is formed directly against the gate cap. | ||
| 地址 | Armonk NY US | ||