发明名称 Semiconductor device with self-aligned interconnects
摘要 A multilayer device and method for fabricating a multilayer device is disclosed. An exemplary multilayer device includes a substrate, a first interlayer dielectric (ILD) layer disposed over the substrate, and a first conductive layer including a first plurality of conductive lines formed in the first ILD layer. The device further includes a second ILD layer disposed over the first ILD layer, and a second conductive layer including a second plurality of conductive lines formed in the second ILD layer. At least one conductive line of the second plurality of conductive lines is formed adjacent to at least one conductive line of the first plurality of conductive lines. The at least one conductive line of the second plurality of conductive lines contacts the at least one conductive line of the first plurality of conductive lines at an interface.
申请公布号 US9627310(B2) 申请公布日期 2017.04.18
申请号 US201213444648 申请日期 2012.04.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Chang Shih-Ming;Hsieh Ken-Hsien;Ou Tsong-Hua;Liu Ru-Gun;Fan Fang-Yu;Hou Yuan-Te
分类号 H01L23/528;H01L23/522;H01L21/768;H01L21/311;H01L23/532 主分类号 H01L23/528
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A multilayer device comprising: a substrate; a first interlayer dielectric (ILD) layer disposed over the substrate, the first ILD layer in direct contact with the substrate; a first conductive layer including a first plurality of parallel conductive lines each having a first thickness, disposed within the first ILD layer, and extending a partial thickness through the first ILD layer, the first plurality of conductive lines comprising a first conductive line, a second line, and a third conductive line positioned between the first conductive line and the second conductive line, there being no conductive features between the first conductive line and the second conductive line except the third conductive line, wherein the first plurality of conductive lines has an orientation in a first direction, wherein at least a portion of the first ILD layer is between the first conductive layer and the substrate; a second ILD layer having a second thickness disposed over the first ILD layer; and a second conductive layer including a second plurality of conductive lines each having a third thickness, disposed within the second ILD layer, wherein the first, second, and third thicknesses are substantially equal, wherein the first plurality of conductive lines are formed of a first metal and the second plurality of conductive lines are formed of a second metal that is different than the first metal, wherein at least one conductive line of the second plurality of conductive lines has an orientation in a second direction and is formed adjacent to and in direct contact with the third conductive line, the at least one conductive line of the second plurality of conductive lines having a first end positioned between the first conductive line and the third conductive line and a second end positioned between the third conductive line and the second conductive line, wherein the second direction is orthogonal to the first direction, wherein the at least one conductive line of the second plurality of conductive lines contacts the third conductive line of the first plurality of conductive lines at an interface, and wherein the interface provides electrical contact between the at least one conductive line of the second plurality of conductive lines and the third conductive line of the first plurality of conductive lines without the use of a via, wherein the interface spans a width of the third conductive line of the first plurality of conductive lines, the width extending from a first sidewall of the third conductive line of the first plurality of conductive lines to a second sidewall of the third conductive line of the first plurality of conductive lines.
地址 Hsinchu TW