Semiconductor device and formation thereof

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a doped region, in some embodiments. The semiconductor device includes a gate over a channel portion of the fin. The gate including a gate electrode over a gate dielectric between a first sidewall spacer and a second sidewall spacer. The first sidewall spacer includes an initial first sidewall spacer over a first portion of a dielectric material. The second sidewall spacer includes an initial second sidewall spacer over a second portion of the dielectric material.

主权项

1. A method of forming a semiconductor device comprising:
forming a doped region in a fin; oxidizing the fin to form a dielectric feature on an outer surface of the doped region; forming a dielectric layer over the fin, the dielectric layer comprising at least one of silicon nitride, aluminum oxide or silicon oxy nitride; forming a dummy gate over at least some of the dielectric layer and over a channel portion of the fin, the dummy gate comprising:
a dummy poly;a first sidewall spacer; anda second sidewall spacer, wherein:
the dummy poly is disposed between the first sidewall spacer and the second sidewall spacer, andthe dummy poly, the first sidewall spacer, and the second sidewall spacer overlie the dielectric layer; removing the dummy poly and a portion of the dielectric layer underlying the dummy poly to define an opening; forming a gate dielectric in the opening between the first sidewall spacer and the second sidewall spacer; and forming a gate electrode in the opening over the gate dielectric.