| 发明名称 | Pattern forming method and manufacturing method for semiconductor device | ||
| 摘要 | According to one embodiment, a mask material is formed on a processing layer, a mask pattern with a top surface and a bottom surface is formed on the mask material, a protective film is formed on the top surface of the mask pattern, and after the formation of the protective film, the bottom surface of the mask pattern is etched in a depth direction. | ||
| 申请公布号 | US9627218(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514729474 | 申请日期 | 2015.06.03 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Horiguchi Kazunori |
| 分类号 | H01L21/311;H01L21/308;H01L21/027;H01L21/033;G03F7/00 | 主分类号 | H01L21/311 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A pattern forming method, comprising: forming a mask material on a processing layer; forming a mask pattern with a top surface corresponding to a convexity of an upper surface of the mask material and a bottom surface corresponding to a concavity of the upper surface of the mask material, the mask material remaining under the bottom surface of the mask pattern; forming a protective film on the top surface of the mask pattern; and etching the remaining mask material under the bottom surface of the mask pattern, the protective film remaining on the top surface of the mask pattern. | ||
| 地址 | Minato-ku JP | ||