Methods and systems for dopant activation using microwave radiation

摘要

A semiconductor structure includes a substrate, a source/drain (S/D) junction, and an S/D contact. The S/D junction is associated with the substrate and includes a trench-defining wall, a semiconductor layer, and a semiconductor material. The trench-defining wall defines a trench. The semiconductor layer is formed over the trench-defining wall, partially fills the trench, substantially covers the trench-defining wall, and includes germanium. The semiconductor material is formed over the semiconductor layer and includes germanium, a percentage composition of which is greater than a percentage composition of the germanium of the semiconductor layer. The S/D contact is formed over the S/D junction.

主权项

1. A semiconductor structure comprising:
a substrate; a source/drain (S/D) junction associated with the substrate and including
a trench-defining wall that defines a trench,a semiconductor layer that is formed over the trench-defining wall, that partially fills the trench, that substantially covers the trench-defining wall, and that includes germanium, anda semiconductor material that is formed over the semiconductor layer and that includes germanium, a percentage composition of which is greater than a percentage composition of the germanium of the semiconductor layer; and an S/D contact formed over the S/D junction.