发明名称 Methods of fabricating micro- and nanostructure arrays and structures formed therefrom
摘要 Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
申请公布号 US9627199(B2) 申请公布日期 2017.04.18
申请号 US201414568576 申请日期 2014.12.12
申请人 University of Maryland, College Park;Northrop Grumman Systems Corporation;The United States of America, as represented by the Secretary of Commerce, National Institute of Standards and Technology 发明人 Motayed Abhishek;Krylyuk Sergiy;Davydov Albert V.;King Matthew;Ha Jong-Yoon
分类号 H01L21/02;H01L33/00;H01L21/306;H01L21/3065;H01L33/18;H01L33/32 主分类号 H01L21/02
代理机构 AuerbachSchrot LLC 代理人 Schrot William C.;AuerbachSchrot LLC
主权项 1. A method of fabricating an array of microstructures, comprising the steps of: providing an epilayer of gallium nitride (GaN) grown on a substrate; etching an array of GaN pillars in said epilayer; and growing GaN shells on said etched array of GaN pillars to form core-shell structures via selective epitaxy, wherein a first portion of said GaN shells are doped with a first material, and a second portion of said GaN shells are doped with a second material different than said first material.
地址 College Park MD US