发明名称 |
Methods of fabricating micro- and nanostructure arrays and structures formed therefrom |
摘要 |
Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby. |
申请公布号 |
US9627199(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201414568576 |
申请日期 |
2014.12.12 |
申请人 |
University of Maryland, College Park;Northrop Grumman Systems Corporation;The United States of America, as represented by the Secretary of Commerce, National Institute of Standards and Technology |
发明人 |
Motayed Abhishek;Krylyuk Sergiy;Davydov Albert V.;King Matthew;Ha Jong-Yoon |
分类号 |
H01L21/02;H01L33/00;H01L21/306;H01L21/3065;H01L33/18;H01L33/32 |
主分类号 |
H01L21/02 |
代理机构 |
AuerbachSchrot LLC |
代理人 |
Schrot William C.;AuerbachSchrot LLC |
主权项 |
1. A method of fabricating an array of microstructures, comprising the steps of:
providing an epilayer of gallium nitride (GaN) grown on a substrate; etching an array of GaN pillars in said epilayer; and growing GaN shells on said etched array of GaN pillars to form core-shell structures via selective epitaxy, wherein a first portion of said GaN shells are doped with a first material, and a second portion of said GaN shells are doped with a second material different than said first material. |
地址 |
College Park MD US |