Methods of forming patterns using photoresist polymers

摘要

A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

主权项

1. A method of forming a pattern, comprising:
forming a photoresist layer on an object layer, the photoresist layer including a polymer that comprises a first repeating unit including a halogen donor group, and a second repeating unit including a leaving group capable of being removed from the polymer by a photochemical reaction, the leaving group being connected to the second repeating unit by a sulfide bond; performing an exposure process on the photoresist layer such that the photoresist layer is divided into an exposed portion and a non-exposed portion, wherein the exposure process is performed by at least one light source; and removing the exposed portion of the photoresist layer to form a photoresist pattern.