Semiconductor device and method of forming ultra high density embedded semiconductor die package

摘要

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

主权项

1. A method of making a semiconductor device, comprising:
providing a reinforced insulating film; disposing a conductive layer on a first surface of the reinforced insulating film; disposing a semiconductor die in contact with a second surface of the reinforced insulating film; disposing a prefabricated laminating layer over the semiconductor die, wherein the prefabricated laminating layer extends completely over the semiconductor die; and laminating the prefabricated laminating layer over the reinforced insulating film by applying pressure to the prefabricated laminating layer against the semiconductor die to embed the semiconductor die in the prefabricated laminating layer and expose an active surface of the semiconductor die from the prefabricated laminating layer opposite the reinforced insulating film, wherein a thickness of the prefabricated laminating layer is approximately equal to a thickness of the semiconductor die across an entire width of the semiconductor device after laminating.