发明名称 Mechanisms for performing a photolithography process with a surface modifying treatment on an exposed photoresist layer
摘要 Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.
申请公布号 US9625822(B2) 申请公布日期 2017.04.18
申请号 US201314067167 申请日期 2013.10.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Tsai Chi-Cheng;Wu Hung-Chi;Lee Tsung-Chuan;Lin Chung-Hsien
分类号 G03F7/38;G03F7/20 主分类号 G03F7/38
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method, comprising: forming a photoresist layer over a substrate; forming exposed photoresist portions in the photoresist layer and residues over the substrate by performing an immersion lithography process on the photoresist layer, wherein an immersion solution of the immersion lithography process includes water; coating a surfactant layer over the photoresist layer and over the residues, wherein the surfactant layer is formed by a mixing solution comprising an amide salt, an alcohol salt, a diol, and ammonium hydroxide, and a concentration of ammonium hydroxide in the mixing solution is in a range from about 65% to about 80%, and a total concentration of amide salt, alcohol salt, and diol in the mixing solution is in a range from about 20% to about 35%; and removing the exposed photoresist portions, the residues, and the surfactant layer by performing a developing process, wherein the residues comprise a photoresist material leaching from the photoresist layer.
地址 Hsin-Chu TW