发明名称 |
METHOD FOR POLISHING GAN SINGLE CRYSTAL MATERIAL |
摘要 |
A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, in which the crystal material is a single crystal of GaN, and the polishing liquid is an oxidizing polishing liquid having an oxidation-reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH between 0.1 and 6.5: Ehmin (mV)=−33.9 pH+750 . . . (1) Ehmax (mV)=−82.1 pH+1491 . . . (2). |
申请公布号 |
US2017100815(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201515128626 |
申请日期 |
2015.03.26 |
申请人 |
Noritake Co., Limited |
发明人 |
SATO Makoto;OMORI Wataru;TAKAHASHI Maiko |
分类号 |
B24B37/04;C09G1/16;H01L21/306;C09G1/02 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Nagoya-shi, Aichi JP |