发明名称 PIXELS WITH A GLOBAL SHUTTER AND HIGH DYNAMIC RANGE
摘要 An imaging pixel may be provided with a photodiode and a floating diffusion region. The pixel may include at least one storage capacitor that can store charge from the floating diffusion region. The at least one storage capacitor may provide global shutter functionality for the pixel. Multiple storage capacitors may be provided for correlated double sampling (CDS) techniques and high dynamic range (HDR) images. The imaging pixel may have an upper substrate layer and a lower substrate layer. The photodiode may be formed in the upper substrate layer, and the storage capacitors may be formed in the lower substrate layer. A interconnect layer may couple pixel circuitry in the upper substrate layer to pixel circuitry in the lower substrate layer.
申请公布号 US2017104946(A1) 申请公布日期 2017.04.13
申请号 US201514877722 申请日期 2015.10.07
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 HONG Sungkwon C.
分类号 H04N5/374;H04N5/378;H01L27/146;H04N9/07 主分类号 H04N5/374
代理机构 代理人
主权项 1. An imaging pixel comprising: an upper substrate layer; a lower substrate layer; a floating diffusion region; a photodiode in the upper substrate layer that is coupled to the floating diffusion region; an interconnect layer interposed between the upper substrate layer and the lower substrate layer that couples the upper substrate layer to the lower substrate layer; a first storage capacitor in the lower substrate layer; a source follower transistor coupled to the floating diffusion region; an additional floating diffusion region; an additional source follower transistor coupled to the additional floating diffusion region; and a sampling transistor coupled between the source follower transistor and the additional floating diffusion region, wherein the floating diffusion region and the source follower transistor are formed in the upper substrate layer, and wherein the additional floating diffusion region and the additional source follower transistor are formed in the lower substrate layer.
地址 Phoenix AZ US