| 发明名称 |
GERMANIUM METAL-CONTACT-FREE NEAR-IR PHOTODETECTOR |
| 摘要 |
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz. |
| 申请公布号 |
US2017104116(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615377294 |
申请日期 |
2016.12.13 |
| 申请人 |
Elenion Technologies, LLC |
发明人 |
Baehr-Jones Thomas Wetteland;Zhang Yi;Hochberg Michael J.;Novack Ari |
| 分类号 |
H01L31/0352;H01L31/107;H01L31/18;H01L31/028 |
主分类号 |
H01L31/0352 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
New York NY US |
