METHOD FOR FABRICATING CONTACTS TO NON-PLANAR MOS TRANSISTORS IN SEMICONDUCTOR DEVICE

摘要

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure on a first region and a second fin-shaped structure on a second region; forming a plurality of first gate structures on the first fin-shaped structure, a plurality of second gate structures on the second fin-shaped structure, and an interlayer dielectric (ILD) layer around the first gate structures and the second gate structures; forming a patterned mask on the ILD layer; and using the patterned mask to remove all of the ILD layer from the first region and part of the ILD layer from the second region for forming a plurality of first contact holes in the first region and a plurality of second contact holes in the second region.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first fin-shaped structure on a first region and a second fin-shaped structure on a second region; forming a plurality of first gate structures on the first fin-shaped structure, a plurality of second gate structures on the second fin-shaped structure, hard masks on the first gate structures and the second gate structures, and an interlayer dielectric (ILD) layer around the first gate structures and the second gate structures; forming a mask layer on the ILD layer; forming a patterned resist on the mask layer; using the patterned resist to remove part of the mask layer for forming a patterned mask on the ILD layer; using the patterned mask to remove all of the ILD layer from the first region for exposing the hard masks on the first region and remove part of the ILD layer from the second region for forming a plurality of first contact holes in the first region and a plurality of second contact holes in the second region; and removing part of the hard masks on the first gate structures.