发明名称 WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE
摘要 A wiring substrate includes a first connection terminal and a protective insulation layer. The first connection terminal is electrically connected to a wiring layer by a via wiring and projects upward from an upper surface of an insulation layer. The protective insulation layer is located on the upper surface of the insulation layer to contact and cover a portion of a side surface of the first connection terminal. The first connection terminal includes a lower portion that is continuous with the via wiring and an upper portion that is continuous with the lower portion. The lower portion is smaller in crystal grain size than the upper portion. The lower portion and the upper portion are formed from the same metal material. The side surface of the lower portion has a higher roughness degree than the side surface of the upper portion.
申请公布号 US2017103942(A1) 申请公布日期 2017.04.13
申请号 US201615284592 申请日期 2016.10.04
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 OI KIYOSHI;MINEMURA TOMOTAKE
分类号 H01L23/498;H01L23/00;H01L23/31 主分类号 H01L23/498
代理机构 代理人
主权项 1. A wiring substrate comprising: a wiring layer; an insulation layer that covers the wiring layer; a via hole that extends through the insulation layer in a thickness-wise direction and exposes an upper surface of the wiring layer; a via wiring formed in the via hole; a columnar first connection terminal electrically connected to the wiring layer by the via wiring and adapted to be connected to an electronic component, wherein the first connection terminal projects upward from an upper surface of the insulation layer; and a protective insulation layer formed on the upper surface of the insulation layer, wherein the protective insulation layer is in contact with and covers a portion of a side surface of the first connection terminal, wherein the first connection terminal includes a lower portion that is continuous with the via wiring and an upper portion that is continuous with the lower portion, the lower portion is set to be smaller in crystal grain size than the upper portion, the lower portion and the upper portion are formed from the same metal material, and a side surface of the lower portion is set to have a higher roughness degree than a side surface of the upper portion.
地址 Nagano-shi JP