| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of : providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate. |
| 申请公布号 |
US2017103896(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615243986 |
申请日期 |
2016.08.23 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hung Ching-Wen;Wu Jia-Rong;Lee Yi-Hui;Liu Ying-Cheng;Huang Chih-Sen;Lin Chun-Hsien |
| 分类号 |
H01L21/28;H01L21/285;H01L29/49;H01L29/78;H01L29/06;H01L29/66;H01L21/768 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate after forming the first contact plug. |
| 地址 |
Hsin-Chu City TW |
