LASER IRRADIATION APPARATUS AND LASER IRRADIATION METHOD

摘要

A laser irradiation apparatus may include a plasma generator, a laser unit configured to output a pulsed laser light beam, and a controller. The plasma generator may be configured to supply an atmospheric pressure plasma containing a dopant to a predetermined region on a semiconductor material. The controller may be configured to control the plasma generator and the laser unit to perform one of first and second controls to thereby perform doping of the dopant into the semiconductor material. The first control may cause irradiation of the predetermined region with one or more pulses of the pulsed laser light beam from start to finish of supply of the atmospheric pressure plasma to the predetermined region. The second control may cause irradiation of the predetermined region with one or more pulses of the pulsed laser light beam after supply of the atmospheric pressure plasma to the predetermined region.

主权项

1. A laser irradiation apparatus, comprising:
a plasma generator configured to supply an atmospheric pressure plasma to a predetermined region on a semiconductor material, the atmospheric pressure plasma containing a dopant; a laser unit configured to output a pulsed laser light beam; and a controller configured to control the plasma generator and the laser unit to perform one of a first control and a second control to thereby perform doping of the dopant into the semiconductor material, the first control causing irradiation of the predetermined region with one or more pulses of the pulsed laser light beam from start to finish of supply of the atmospheric pressure plasma to the predetermined region, and the second control causing irradiation of the predetermined region with one or more pulses of the pulsed laser light beam after supply of the atmospheric pressure plasma to the predetermined region.